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Home > Produkter > Diskrete Semiconductor Products > Transistoren - FETs, MOSFET - Single > TK4A55D(STA4,Q,M)

TK4A55D(STA4,Q,M)

TK4A55D(STA4,Q,M)
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Freet e Zitat

Part Number TK4A55D(STA4,Q,M)
Hiersteller Toshiba Semiconductor and Storage
Beschreiwung MOSFET N-CH 550V 4A TO-220SIS
Bleif Free Status / RoHS Status Bleif gratis / RoHS kompatibel
In Stock 5408 pcs
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Product parameter

Part Number TK4A55D(STA4,Q,M) Hiersteller Toshiba Semiconductor and Storage
Beschreiwung MOSFET N-CH 550V 4A TO-220SIS Bleif Free Status / RoHS Status Bleif gratis / RoHS kompatibel
Quantitéit Verfügt 5408 pcs Datenlabel TK4A55DMosfets Prod Guide
Kategorie Diskrete Semiconductor Products Vgs (th) (Max) @ Id 4.4V @ 1mA
Vgs (Max) ±30V Technologie MOSFET (Metal Oxide)
Supplier Device Package TO-220SIS Serie π-MOSVII
Rds On (Max) @ Id, Vgs 1.88 Ohm @ 2A, 10V Power Dissipation (Max) 35W (Tc)
Verpakung Tube Package / Case TO-220-3 Full Pack
Aner Names TK4A55D(STA4QM)
TK4A55DSTA4QM
Operatioun Temperatur 150°C (TJ)
Mounting Type Through Hole Feuchtigkeit Sensibilitéitniveau (MSL) 1 (Unlimited)
Bleif Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V FET Typ N-Channel
FET Feature - Fuert Volt (Max Rds On, Min Rds On) 10V
Entworf fir Source Voltage (Vdss) 550V Detailbeschreiwung N-Channel 550V 4A (Ta) 35W (Tc) Through Hole TO-220SIS
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C 4A (Ta)

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Toshiba Semiconductor and Storage TK4A55D(STA4,Q,M) TK4A55D(STA4,Q,M) Distributeur TK4A55D(STA4,Q,M) Liwwerant TK4A55D(STA4,Q,M) Präis TK4A55D(STA4,Q,M) Eroflueden Datasheet TK4A55D(STA4,Q,M) Dataas TK4A55D(STA4,Q,M) AktieKaaft TK4A55D(STA4,Q,M) Toshiba Semiconductor and Storage TK4A55D(STA4,Q,M) Toshiba TK4A55D(STA4,Q,M)
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