TK4A55D(STA4,Q,M)
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Part Number | TK4A55D(STA4,Q,M) |
---|---|
Hiersteller | Toshiba Semiconductor and Storage |
Beschreiwung | MOSFET N-CH 550V 4A TO-220SIS |
Bleif Free Status / RoHS Status | Bleif gratis / RoHS kompatibel |
Referenz Präis (an US Dollars) | Get a quote |
- Produktparameter
- Datenlabel
Product parameter
Part Number | TK4A55D(STA4,Q,M) | Hiersteller | Toshiba Semiconductor and Storage |
---|---|---|---|
Beschreiwung | MOSFET N-CH 550V 4A TO-220SIS | Bleif Free Status / RoHS Status | Bleif gratis / RoHS kompatibel |
Quantitéit Verfügt | 5408 pcs | Datenlabel | TK4A55DMosfets Prod Guide |
Kategorie | Diskrete Semiconductor Products | Vgs (th) (Max) @ Id | 4.4V @ 1mA |
Vgs (Max) | ±30V | Technologie | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220SIS | Serie | π-MOSVII |
Rds On (Max) @ Id, Vgs | 1.88 Ohm @ 2A, 10V | Power Dissipation (Max) | 35W (Tc) |
Verpakung | Tube | Package / Case | TO-220-3 Full Pack |
Aner Names | TK4A55D(STA4QM) TK4A55DSTA4QM |
Operatioun Temperatur | 150°C (TJ) |
Mounting Type | Through Hole | Feuchtigkeit Sensibilitéitniveau (MSL) | 1 (Unlimited) |
Bleif Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V | FET Typ | N-Channel |
FET Feature | - | Fuert Volt (Max Rds On, Min Rds On) | 10V |
Entworf fir Source Voltage (Vdss) | 550V | Detailbeschreiwung | N-Channel 550V 4A (Ta) 35W (Tc) Through Hole TO-220SIS |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) |
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